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美国国际整流器代理商|IR中国代理商|IRF代理商|International Rectifier代理商

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美国国际整流器公司成立于1947年,是主要的全球功率半导体供应商。我们的产品通过电能转换,为各种电源系统、电机传动系统及照明镇流器提供能源。
  IF代理商的HEXFET功率MOSFET、IGBT及HVIC产品均已获得专利,力求成为全球功率转换器件行业的领袖。在世界市场上,现在有超过70%的HEXFET功率MOSFET生产厂商向我们购买专利。IRF代理商的先进技术及产品,可应用于汽车、家用电器、计算机及其外围设备、工业、照明、通讯、军品及宇航等方面,改善了电子及电器设备的性能及能源利用效率。生产厂商向我们购买专利。
  国际整流器代理商在世界范围内拥有员工5800人,在美国、墨西哥、英国及意大利设有制造厂。在中国大陆(北京、上海、深圳和西安)、香港、台湾、印度、韩国、新加坡、澳大利亚及菲律宾,国际整流器公司均设有办事处。

IR推出 1200V IGBT AUIRGDC0250

全球功率半导体和管理方案领导厂商 – 国际整流器公司 (International Rectifier,简称IR) 推出为软开关应用,比如电动车和混合动力汽车中的正温度系数(PTC)加热器应用而优化的车用 IGBT AUIRGDC0250。
1200V AUIRGDC0250 采用紧凑的 Super TO-220 封装,低 VCE(on) 可让该器件降低功耗并实现更高的功率密度,正 VCE(on) 温度系数则使其更适合并联。此外,AUIRGDC0250 还提供经过优化的方形反向偏压安全操作区 (RBSOA)。AUIRGDC0250 的软开关特性使其成为帮助客户符合系统级 EMI 规范的理想选择。
IR 亚太区销售副总裁潘大伟表示:“AUIRGDC0250 的低传导损耗使其非常适合继电器更换插座,包括 PTC 加热器应用,而它的 Super TO-220 封装可让客户满足爬电距离的要求。”
所有 IR代理商 车用 MOSFET 产品都遵循 IR 要求零缺陷的汽车质量理念,并经过了动态和静态器件平均测试及 100% 自动晶圆级目视检查。新器件都采用IR的汽车级物料清单,环保、不含铅,并符合电子产品有害物质管制规定 (RoHS) 。
产品规格
器件编号封装V­CESINIC @ TC = 100°C典型Vce(on) @ 25°C
AUIRGDC0250Super TO-2201200V33A81A1.37

新器件正接受批量订单。相关数据、应用说明和认证标准,请浏览IR的网站www.irf.com。IR还提供Spice模型供索取。

商标
IR® 是国际整流器公司 (International Rectifier Corporation) 的注册商标。文中所提及其它产品名称均为IR代理商的商标。

International Rectifier (IR) (Symbol:IRF--NYSE) is a pioneer and world leader in advanced power management technology, from digital, analog and mixed-signal ICs to advanced circuit devices, power systems and components. The world's leading manufacturers of computers, appliances, automobiles, consumer electronics and defense systems rely on IR technology to drive the performance and efficiency of their products. Today, power management technology plays a more important role than ever in saving the world's dwindling energy reserves while tackling tough technology roadblocks.

  • IR technology makes variable-speed operation practical and affordable for everything from conveyor belts to washing machines.
  • We allow laptop computers to run longer.
  • We're raising the bar for vehicle performance and fuel economy with electronic steering and a host of other advances.

Technology Leader

  • Digital, analog and mixed-signal ICs, advanced circuit devices, power systems and components
  • We pioneered and hold key patents on technology that created the $5 billion power MOSFET industry.
  • We focus completely on power chips and subsystems, and we create proprietary products that add more value to our customers' end products.
     
  • Our high-volume dedicated fab sets the benchmark for cost in our industry.
  • We invest aggressively in R&D, and we're generating a flow of highly-differentiated products targeted to high-growth applications.
  • IR has the products, capacity, and cost structure to grow and build shareholder value.

Products

  • High performance analog, digital and mixed-signal ICs
  • Advanced circuit devices
  • Power systems
  • Components

IR - Six Decades of Technology Leadership
International Rectifier was founded in Los Angeles in August 1947 to manufacture Selenium rectifiers. IR was one of the first companies to commercialize Germanium rectifiers in 1954, and the first to introduce commercial zener diodes and solar cells in 1958. IR's 50-year legacy of power semiconductor technology "firsts" include:

  • The first silicon controlled rectifier (SCR) in 1959
  • Development of the first epitaxial process in 1962 for producing the industry's most stable high voltage SCRs.
  • One of the first suppliers of hi-reliability devices for space applications
  • Introduction of the first power transistors and Darlington transistors to use glass passivation in 1974
  • The first hexagonal-celled power MOSFET, trademarked HEXFET® in 1979
  • Introduction of one of the world's first intelligent power ICs called the ChipSwitch® in 1983
  • First patents issued for power MOSFET and IGBT products in 1983
  • Introduced the world's first high voltage power IC in 1983
  • The world's first SmartFET in 1993
  • The world's first four mask MOSFET manufacturing process in 1996
  • The world's first MOSFET and Schottky in a single package or FETKY® product in 1996
  • The world's highest density and lowest RDS(on) self-aligned planar and trench MOSFETs in 1999
  • FlipFET™ wafer-level packaging for portable applications in 2000
  • iPOWIR™ integrated building blocks for DC-DC converters in 2001
  • DirectFET®, a packaging technology breakthrough for high performance DC-DC converters in 2002
  • iMOTION™ integrated design platform for variable speed motor drive in 2003

Sales Contacts

 

 
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